산화물 박막소자 연구실 Introduction
HUFS PHYSICS
magnetic material and oxide thin film laboratory
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The research activities in our laboratory are currently focused on the following topics related to oxide materials:
• Metal-Insulator Transition on SrRuO3
Recently, the ferromagnetic SrRuO3 has been used as a model system due to its unique structural, magnetic and electronic properties, and chemical stability. We study the electrical, magnetic, and metal-insulator transition of SrRuO3 thin films deposited by laser MBE system.
• Resistive Random Access Memory
As one of the promising candidates for the next generation nonvolatile memory devices, resistive switching materials have recently attracted a lot of research attention. We mainly focus on the resistive switching behaviors of the binary oxides, especially on the investigation of switching mechanisms.
• Rare-earth iron oxide
Rare-earth iron oxides of the form RFe2O4 (R=Y, Ho, Er, Tm, Yb, and Lu) materials are known as multiferroics materials that belong to the rhombohedral system. Iron ions form a triangular lattice in double layers stacked alternately along the c-axis and these layers is taken apart by single rare-earth triangular layer. These materials suffered charge and spin frustration because the Fe2+ and Fe3+ ions coexist at the equivalent site on the triangular lattice and have average valence of +2.5. Basically, this geometrical frustration contributes an important part in several interesting properties. The research about these materials in this lab heavily focuses on the magnetic properties. The goal of this research includes defining the glass behavior and the magnetic phase diagram of doped rare-earth iron oxides.
• Doped Barium Titanium Oxide
The research includes the semiconductor behavior, ferroelectricity, and dielectric properties. As doping material, we use mostly rare-earth elements. Beside different doping materials, we also use different methods to prepare the polycrystalline samples. These differences are aimed to obtain different electrical properties especially low in resistivity.
